Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-01-03

2009-02-24

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257SE27112, C257SE21320, C438S149000

Reexamination Certificate

active

07495287

ABSTRACT:
A semiconductor device includes a semiconductor layer formed by epitaxial growth in a first region which is obtained by etching a semiconductor substrate to a predetermined depth, a surface of the semiconductor layer having a same height from the bottom of the semiconductor substrate as a height of a surface of the semiconductor substrate, a buried insulating layer buried between the semiconductor substrate and the semiconductor layer and an element isolation region separating each element region in the semiconductor layer and isolating the semiconductor layer from the semiconductor substrate in plan.

REFERENCES:
patent: 7361956 (2008-04-01), Oh et al.
patent: 2006-156731 (2006-06-01), None
patent: 2006-210551 (2006-08-01), None
T. Sakai et al., Separation by Bonding Si Islands (SBSI) for LSI Applications, Second International SiGe Technology and Device Meeting, Meeting Abstract, May 2004, pp. 230-231.

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