Static information storage and retrieval – Read/write circuit – Signals
Patent
1997-12-23
1999-05-25
Nelms, David
Static information storage and retrieval
Read/write circuit
Signals
36523003, 36523006, 365200, G11C 700
Patent
active
059075112
ABSTRACT:
A DRAM array embedded in an IC, ASIC or a SLIC includes a plurality of redundant functional elements and a substitution circuit which responds to signals communicated from a bus to electrically connect selected ones of the redundant elements as fully functional replacements for corresponding defective elements of the DRAM array. The redundant elements include bit blocks and word line groups. The substitution circuit includes a controllable selector which electrically connects selected ones of the bit blocks and word lines to respond to data and address signals communicated on the bus. A register responds to bus control signals and supplies signals to achieve connection of the redundant elements. The defective elements are identified, and the replacement redundant elements are substituted, by testing the elements of the DRAM array for proper functionality and processing the results of the test.
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Bailey Wayne P.
Le Thong
Ley John R.
LSI Logic Corporation
Nelms David
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