Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-08
2009-02-03
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S301000, C257SE27096, C438S259000
Reexamination Certificate
active
07485910
ABSTRACT:
The present invention provides a semiconductor structure that includes an active wordline located above a semiconductor memory device and a passive wordline located adjacent to said active wordline and above an active area of a substrate. In accordance with the present invention, the passive wordline is separated from the active area by a pad nitride. The present invention also provides methods that are capable of forming the inventive semiconductor structure.
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Divakaruni Ramachandra
Kim Deok-kee
Park Dae-Gyu
Radens Carl J.
International Business Machines - Corporation
Jaklitsch, Esq. Lisa U.
Scully , Scott, Murphy & Presser, P.C.
Taylor Earl N
Vu David
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