Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-25
2009-11-17
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S270000, C438S261000, C257S324000, C257S330000, C257SE29300
Reexamination Certificate
active
07619275
ABSTRACT:
A process for forming an electronic device can include forming a trench within a substrate, wherein the trench includes a wall and a bottom. The process can also include including forming a portion of discontinuous storage elements that lie within the trench, and forming a first gate electrode within the trench after forming the discontinuous storage elements. At least one discontinuous storage element lies along the wall of the trench at an elevation between an upper surface of the first gate electrode and a primary surface of the substrate. The process can also include forming a second gate electrode overlying the first gate electrode and the primary surface of the substrate.
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Chang Ko-Min
Chindalore Gowrishankar L.
Hong Cheong M.
Sadd Michael A.
Swift Craig T.
Freescale Semiconductor Inc.
Montalvo Eva Yan
Pizarro Marcos D.
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