Vertical field-effect transistor and method of forming the same

Details Vertical field-effect transistor and method of forming the same Vertical field-effect transistor and method of forming the same

2007-06-19

2009-06-02

Landau, Matthew C (Department: 4183)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S476000, C257SE29262, C438S212000, C438S268000

Reexamination Certificate

active

07541640

ABSTRACT:
A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.

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