SOI MOSFET device with reduced polysilicon loading on active...

Details SOI MOSFET device with reduced polysilicon loading on active... SOI MOSFET device with reduced polysilicon loading on active...

2005-02-08

2008-11-18

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257SE33002

Reexamination Certificate

active

07453122

ABSTRACT:
Silicon-on-insulator (SOI) devices with reduced polysilicon loading on an active area uses at least one dielectric layer resistant to silicidation to separate at least one body contact region from source/drain regions, thus reducing gate capacitance and improving device performance. The SOI devices may be used in full depletion type transistors or partial depletion type transistors.

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