Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-03-14
2008-11-18
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S284000, C438S407000, C257SE21618, C257SE21442
Reexamination Certificate
active
07452758
ABSTRACT:
There is a FinFET device. The device has a silicon substrate, an oxide layer, and a polysilicone gate. The silicon substrate defines a planar body, a medial body, and a fin. The planar body, the medial body, and the fin are integrally connected. The medial body connects the planar body and the fin. The planar body extends generally around the medial body. The fin is situated to extend substantially from a first side of the substrate to an opposing second side of the substrate. The fin is substantially perpendicularly disposed with respect to the planar body. The first oxide layer is situated on the planar body between the planar body and the fin. The oxide layer extends substantially around the medial body. The polysilicone gate is situated on the oxide layer to extend substantially from a third side to an opposing fourth side of the substrate. The gate is situated to extend across the fin proximal to a medial portion of an upper surface of the fin. There is also a process for making a FinFET device.
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Dyer Thomas W.
Yang Haining S.
Abate Esq. Joseph P.
Fourson George
International Business Machines - Corporation
Ohlandt Greeley Ruggiero & Perle L.L.P.
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