Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2005-08-08
2008-11-18
Kim, Hong (Department: 2185)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C711S154000, C711S156000, C711S162000, C711S170000, C365S185330, C365S185290, C714S763000
Reexamination Certificate
active
07454558
ABSTRACT:
An improved Flash memory device with a distributed erase block management (EBM) scheme is detailed that enhances operation and helps minimize write fatigue of the floating gate memory cells of the Flash memory device. The Flash memory device of the invention combines the EBM data in a user data erase block by placing it in an EBM data field of the control data section of the erase block sectors. Therefore distributing the EBM data within the Flash memory erase block structure. This allows the Flash memory to update and/or erase the user data and the EBM data in a single operation, to reduce overhead and speed operation. The Flash memory also reduces the process of EBM data structure write fatigue by allowing the EBM data fields to be load leveled by rotating them with the erase blocks they describe.
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Kim Hong
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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