Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2005-07-14

2008-11-04

Everhart, Caridad M (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C257SE21625, C257SE21159

Reexamination Certificate

active

07446059

ABSTRACT:
A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent Oxide Thickness) and by preventing crystallization of the material having a high relative dielectric constant. The semiconductor device (Field Effect Transistor) has a silicon substrate, a seed layer made up of silicon oxide, a gate insulating film made of amorphous hafnium aliminate and a gate electrode made up of polycrystalline silicon formed the gate insulating film. The gate insulating film is so formed that a hafnium concentration decreases monotonously or step by step, whereas an aluminum concentration increases monotonously or step by step along a direction of a thickness of the gate insulating film from the silicon substrate side toward the gate electrode. In a boundary region between a lower layer side region and an upper layer side region in the gate insulating film, the hafnium and aluminum concentrations change continuously.

REFERENCES:
patent: 6586349 (2003-07-01), Jeon et al.
patent: 2002/0137250 (2002-09-01), Nguyen et al.
patent: 2003/0003667 (2003-01-01), Morisaki et al.
patent: 2004/0046497 (2004-03-01), Schaepkens et al.
patent: 2002-314072 (2002-10-01), None

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