Top drain fet with integrated body short

Details Top drain fet with integrated body short Top drain fet with integrated body short

2005-09-29

2008-11-25

Landau, Matthew C. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S332000, C257S341000, C257SE27091, C257SE29201, C257SE29257, C257SE29260

Reexamination Certificate

active

07456470

ABSTRACT:
A top drain MOSgated device has its drain on the top of semiconductor die and its source on the bottom of the die substrate. Parallel spaced trenches extend from the die top surface through a drift region, a channel region and terminate on the substrate region. The bottoms of each trench receive a silicide conductor to short the substrate source to channel regions. The silicide conductors are then insulated at their top surfaces and gate electrodes are placed in the same trenches as those receiving the channel/source short.

REFERENCES:
patent: 5134448 (1992-07-01), Johnsen et al.
patent: 6509608 (2003-01-01), Hueting
patent: 6906380 (2005-06-01), Pattanayak et al.
patent: 2006/0220093 (2006-10-01), Van Schaijk et al.

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