Process for fabricating an integrated circuit comprising a...

Details Process for fabricating an integrated circuit comprising a... Process for fabricating an integrated circuit comprising a...

2006-07-05

2008-11-11

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27133

Reexamination Certificate

active

07449737

ABSTRACT:
An integrated circuit includes at least one photodiode associated with a transfer transistor. The photodiode is formed with an upper pn junction. The transfer transistor includes a lateral spacer located on a side facing the photodiode. An upper layer of the upper pn junction includes a lateral surface extension lying beneath the spacer. A lower layer of the upper pn junction forms a source/drain region for the transfer transistor. An edge of the lateral surface extension lying beneath the spacer and adjacent a gate of the transfer transistor contacts a substrate of the integrated circuit. An oxide layer insulating the gate from the underlying substrate does not overlie the lateral surface extension of the upper layer underneath of the lateral spacer.

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Preliminary French Search Report, FR 05 07145, dated Apr. 4, 2006.

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