Method of making bipolar semiconductor device having a conductiv

Details Method of making bipolar semiconductor device having a conductiv Method of making bipolar semiconductor device having a conductiv

1987-12-28

1989-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148335, 437233, H01L 21461

Patent

active

048371777

ABSTRACT:
A semiconductor device having a conductive recombination layer. The conductive recombination layer, comprised of doped polycrystalline material, doped polycrystalline material and tungsten silicide, or tungsten silicide, is disposed between two separate semiconductor substrates which are bonded together using a polished surface on the conductive recombination layer as one of the bonding interfaces. The conductive recombination layer recombines minority carriers and thereby increases the switching speed of the device.

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patent: 4701424 (1987-10-01), Mikkor
patent: 4752818 (1988-06-01), Kushida et al.
patent: 4774196 (1988-09-01), Blanchard

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