Programming method for flash memory capable of compensating...

Details Programming method for flash memory capable of compensating... Programming method for flash memory capable of compensating...

2006-08-31

2008-12-09

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185240

Reexamination Certificate

active

07463526

ABSTRACT:
A programming method of a flash memory device having a plurality of memory cells for storing multi-bit data indicating one of a plurality of states. The programming method includes programming selected memory cells using multi-bit data to have one of the states; detecting programmed memory cells arranged within a predetermined region of threshold voltage distribution each corresponding to at least two of the states, wherein predetermined regions of the respective at least two states are selected by one of a first verify voltage and a read voltage and a second verify voltage, the first verify voltage being lower than the second verify voltage and higher than the read voltage; and simultaneously programming detected memory cells of the at least two states to have a threshold voltage being equivalent to or higher than the second verify voltage corresponding to each of the states.

REFERENCES:
patent: 2005/0105337 (2005-05-01), Cohen et al.
patent: 10214492 (1998-08-01), None
patent: 2000222893 (2000-08-01), None
patent: 1020050018943 (2005-02-01), None
patent: 1020060107689 (2006-10-01), None
patent: 2004006266 (2004-01-01), None

Affiliated with

Also associated with

Rating

Programming method for flash memory capable of compensating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming method for flash memory capable of compensating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming method for flash memory capable of compensating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4047064