Resist composition, method of forming resist pattern,...

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Reexamination Certificate

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C430S192000, C430S326000, C430S330000

Reexamination Certificate

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07452657

ABSTRACT:
The resist composition of the present invention contains at least one of a tannin and a derivative thereof. The method of forming a resist pattern of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; and exposing and developing the resist film. The method of manufacturing a semiconductor device of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; exposing and developing the resist film to form a resist pattern; and patterning the surface of the object by performing an etching through the resist pattern as a mask.

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Tannin, from WIKIPEDIA http://en.wikipedia.org/wiki/Tannin.
European Search Report dated Feb. 8, 2006, issued in corresponding European Patent Application No. 05-021539.
Office Action dated Oct. 24, 2006 issued in corresponding to Korean Application No. 10-2005-0091525.

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