Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-10
2008-11-04
Graybill, David E (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C977S887000, C257SE21413, C257SE21414, C216S052000
Reexamination Certificate
active
07445971
ABSTRACT:
The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and suitable for mass production. These objects are achieved by a thin-film transistor formed on a substrate1with a finely processed concavoconvex surface2, in which a source electrode and a drain electrode are formed on adjacent convex portions of the concavoconvex surface2, with a channel and a gate being formed on a concave area between the convex portions. A gate electrode5, a gate insulating film6and a semiconductor channel layer7are laminated in this order on the concave area from the bottom surface of the concave portion toward the top surface. Preferably, in this thin-film transistor, the concavoconvex surface is formed of a curing resin, a semiconductor constituting a thin-film transistor is formed of a semiconductor such as polycrystal silicon or an organic semiconductor material, and the substrate is formed of glass, plastic or a composite material of these materials.
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Saito Wataru
Yamashita Yudai
Dai Nippon Printing Co. Ltd.
Graybill David E
Ladas & Parry LLP
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