Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2006-08-01

2008-11-25

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S250000, C257SE27098, C438S284000

Reexamination Certificate

active

07456481

ABSTRACT:
A semiconductor device includes a first device region including a plurality of source regions and a plurality of drain regions of first conductivity type transistors, a plurality of loop-shaped gate electrode regions of the first conductivity type transistors, a second device region including a plurality of source regions and a plurality of drain regions of a second conductivity type transistors, a plurality of loop-shaped gate electrode regions of the second conductivity type transistors, a first wiring configured to supply a first voltage to at least one of the source regions of the first device region, a second wiring configured to supply a second voltage to at least one of the source regions of the second device region, and a third wiring electrically coupled to the drain regions of the first and second device regions and to the gate electrode regions of the first and the second conductivity type transistors.

REFERENCES:
patent: 6057568 (2000-05-01), Kumagai
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 6888207 (2005-05-01), Hebert
patent: 2001/0038551 (2001-11-01), Forbes
patent: 2003/0178670 (2003-09-01), Fried et al.
patent: 2004/0026759 (2004-02-01), Nakabayashi
patent: 60-142567 (1985-07-01), None
patent: 62-105426 (1987-05-01), None
patent: 63-307739 (1988-12-01), None
patent: 02-201965 (1990-08-01), None
patent: 03-108329 (1991-05-01), None
patent: 03-145761 (1991-06-01), None
patent: 04-078171 (1992-03-01), None
patent: 05-021790 (1993-01-01), None
patent: 04-056361 (1993-02-01), None
patent: 05-198817 (1993-08-01), None
patent: 7-202146 (1995-08-01), None
patent: 07-263677 (1995-10-01), None
patent: 2000-174267 (2000-06-01), None
Yang-Kyu Choi, et al., “Sub-20nm CMOS FinFET Technologies”, International Electron Devcies Meeting (IEDM) Tech. Dig., Dec. 2001, pp. 421-424.
Bin Yu, et al., “FinFET Scaling to 10nm Gate Length”, International Electron Devices Meeting (IEDM) Tech. Dig., Dec. 2002, pp. 251-254.

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