Solid state imaging device

Details Solid state imaging device Solid state imaging device

2006-07-27

2008-11-04

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S294000, C257SE27133

Reexamination Certificate

active

07446356

ABSTRACT:
A CCD image sensor includes photodiodes, vertical transfer CCDs for transferal of signal charge of the photodiodes, and a light shielding layer for protection of the vertical transfer CCDs from light. The light shielding layer covers over recesses disposed above the photodiodes, and each of the recesses has an opening on the bottom to expose a light receiving surface of the photodiode. A light diffusion layer is formed on the light shielding layer in each recess. Since the incident light oblique to an optical axis of a microlens is diffused by the light diffusion layer, the vertical CCDs hardly receive the light coming from around the edges of the opening.

REFERENCES:
patent: 6018169 (2000-01-01), Tohyama
patent: 6506497 (2003-01-01), Kennedy et al.
patent: 2003/0124763 (2003-07-01), Fan et al.
patent: 2006/0062899 (2006-03-01), Rankin et al.
patent: 2006/0072215 (2006-04-01), Nishi
patent: 2006/0166395 (2006-07-01), Layman et al.
patent: 60-010883 (1985-01-01), None
patent: 04-014257 (1992-01-01), None
patent: 10-135433 (1998-05-01), None
[http://www.vbl.kobe-u.ac.jp/topics.html], Polymer fine particle with plural holes on the surface, Apr. 23, 2005.

Affiliated with

Also associated with

Rating

Solid state imaging device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid state imaging device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state imaging device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4044630