Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-08
2008-12-09
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S306000
Reexamination Certificate
active
07462898
ABSTRACT:
A ferroelectric capacitor is formed above a substrate and made of a lamination of a lower electrode, a capacitor ferroelectric film and an upper electrode stacked in this order. The upper electrode is made of conductive oxide and has such an oxygen concentration distribution as an oxygen concentration in a lower layer region of the upper electrode becomes lower than an oxygen concentration in an upper layer region. An interlayer insulating film covers the ferroelectric capacitor. A via hole is formed through the interlayer insulating film and reaches a position deeper than an upper surface of the upper electrode. The via hole is stopped at a position shallower than a position at which the oxygen concentration of the upper electrode becomes maximum. A conductive member contacts the upper electrode on a bottom of the via hole.
REFERENCES:
patent: 6927124 (2005-08-01), Suzuki
patent: 2760490 (1998-03-01), None
patent: 2000-235978 (2000-08-01), None
patent: 2000-332105 (2000-11-01), None
patent: 2001-127262 (2001-05-01), None
Doan Theresa T
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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