Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-05-18

2008-12-30

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S413000, C257S585000, C257S900000

Reexamination Certificate

active

07470961

ABSTRACT:
A semiconductor device provided with a semiconductor silicon substrate and gate wiring provided on the semiconductor silicon substrate via a gate oxide film, where the gate wiring has a gate electrode, a gate wiring upper structure provided in contact with the gate electrode, and a side wall spacer, the side wall spacer is comprised of one kind or two or more kinds of inorganic compound insulating layers, and at least one kind of the inorganic compound insulating layer is comprised of silicon oxynitride with a nitrogen content ranging from 30 to 70%.

REFERENCES:
patent: 6172411 (2001-01-01), Chao et al.
patent: 6255698 (2001-07-01), Gardner et al.
patent: 6744084 (2004-06-01), Fossum
patent: 2000-91562 (2000-03-01), None

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