Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-27

2008-11-25

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S310000, C257SE27104

Reexamination Certificate

active

07456456

ABSTRACT:
A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.

REFERENCES:
patent: 6586790 (2003-07-01), Kanaya et al.
patent: 2000-260954 (2000-09-01), None
patent: 2001-196547 (2001-07-01), None
patent: 2003-174146 (2003-06-01), None

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