Semiconductor element and manufacturing method thereof

Details Semiconductor element and manufacturing method thereof Semiconductor element and manufacturing method thereof

2007-10-10

2008-11-04

Potter, Roy K (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000

Reexamination Certificate

active

07446029

ABSTRACT:
In a semiconductor element, if a crack is generated inside a bonding pad, the crack does not propagate inside the semiconductor element. The semiconductor element has an electrode on a surface thereof. A wiring layer is formed inside the semiconductor element. A conductive layer is formed separate from the wiring layer so as to form a surface of the electrode. A plurality of pole-like members are formed of a conductive material and extending between the wiring layer and the conductive layer and arranged adjacent to each other. The insulating layer is formed of an insulating material filled between the plurality of pole-like members. A frame member extends between the wiring layer and the conductive layer so as to surround the plurality of pole-like members and the insulating layer together.

REFERENCES:
patent: 5739587 (1998-04-01), Sato
patent: 5986343 (1999-11-01), Chittipeddi et al.
patent: 6100589 (2000-08-01), Tanaka
patent: 6552438 (2003-04-01), Lee et al.
patent: 6791196 (2004-09-01), Kwon et al.
patent: 6818540 (2004-11-01), Saran et al.
patent: 10-64945 (1998-03-01), None
patent: 2001-358169 (2001-12-01), None
patent: 2002-208610 (2002-07-01), None

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