Stacked capacitor array and fabrication method for a stacked...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S303000, C257SE21229, C257SE21396, C257SE21648

Reexamination Certificate

active

07456461

ABSTRACT:
The present invention relates to a stacked capacitor array and a fabrication method for a stacked capacitor array having a multiplicity of stacked capacitors, an insulator keeping at least two adjacent stacked capacitors mutually spaced apart, so that no electrical contact can arise between them and the stacked capacitors are mechanically stabilized.

REFERENCES:
patent: 5330614 (1994-07-01), Ahn
patent: 5753949 (1998-05-01), Honma et al.
patent: 5824592 (1998-10-01), Tseng
patent: 5946571 (1999-08-01), Hsue et al.
patent: 6008514 (1999-12-01), Wu
patent: 6025246 (2000-02-01), Kim
patent: 6156608 (2000-12-01), Chen
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6395600 (2002-05-01), Durcan et al.
patent: 6403418 (2002-06-01), Wang et al.
patent: 6403442 (2002-06-01), Reinberg
patent: 6489195 (2002-12-01), Hwang et al.
patent: 6563190 (2003-05-01), Lee et al.
patent: 6617222 (2003-09-01), Coursey
patent: 6667502 (2003-12-01), Agarwal et al.
patent: 6667505 (2003-12-01), Narimatsu et al.
patent: 7053435 (2006-05-01), Yeo et al.
patent: 7112487 (2006-09-01), Gutsche et al.
patent: 2002/0094617 (2002-07-01), Taniguchi
patent: 2002/0149043 (2002-10-01), Willer et al.
patent: 2003/0001180 (2003-01-01), Narimatsu et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2005/0054159 (2005-03-01), Manning et al.
patent: 2005/0245022 (2005-11-01), Gutsche et al.
patent: 2005/0245027 (2005-11-01), Gutsche et al.
patent: 199 50 364 (2001-04-01), None
patent: 102 12 868 (2003-01-01), None
patent: 10 2004 045 492 (2005-05-01), None
patent: 10 2004 055 463 (2005-08-01), None
patent: 10212868 (2003-01-01), None
patent: 1020010083563 (2001-09-01), None
German Office Action dated Dec. 6, 2004.
Drynan et al., “Cylindrical Full Metal Capacitor Technology for High-Speed Gigabit DRAMs,”Symposium on VLSI Technology Digest of Technical Papers, pp. 151-152, 1997.
Hatakeyama et al., “A 256-Mb SDRAM Using a Register-Controlled Digital DLL,”IEEE J. Solid State Circ., vol. 32, No. 11, pp. 1728-1732, Nov. 1997.
Kaga et al., “Crown-Shaped Stacked-Capacitor Cel for 1.5-V Operation 64-Mb DRAM's,”IEEE Trans. Electron Devices, vol. 38, No. 2, pp. 255-260, Feb. 1991.
Kaga et al., “Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's,”IEEE Trans. Electron Devices, vol. 38, No. 2, pp. 255-260, Feb. 1991.

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