Memory device, memory circuit and semiconductor integrated...

Details Memory device, memory circuit and semiconductor integrated... Memory device, memory circuit and semiconductor integrated...

2004-10-22

2008-12-09

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S046000, C365S100000

Reexamination Certificate

active

07463506

ABSTRACT:
A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.

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Korean Office Action, issued in Korean Patent Application No. 10-2006-7013643, dated on Mar. 12, 2008.
Zhuang et al. “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance random Access Memory (RRAM)” IEEE, IEDM, 2002, 193-196.
Zhuang W., et al. “Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)” Technical Digest of International Electron Devices Meeting 2002, San Francisco, CA, Dec. 8-11; New York, NY Dec. 8, pp. 193-196.
Korean Office Action issued in Korean Patent Application No. KR 10-2007-7025668, mailed Oct. 9, 2008.

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