Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2008-11-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S655000, C438S654000, C438S682000, C257SE29156, C257SE29151, C257SE29199
Reexamination Certificate
active
07449410
ABSTRACT:
The invention included to methods of forming CoSi2, methods of forming field effect transistors, and methods of forming conductive contacts. In one implementation, a method of forming CoSi2includes forming a substantially amorphous layer comprising MSixover a silicon-containing substrate, where “M” comprises at least some metal other than cobalt. A layer comprising cobalt is deposited over the substantially amorphous MSix-comprising layer. The substrate is annealed effective to diffuse cobalt of the cobalt-comprising layer through the substantially amorphous MSix-comprising layer and combine with silicon of the silicon-containing substrate to form CoSi2beneath the substantially amorphous MSix-comprising layer. Other aspects and implementations are contemplated.
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Fourson George
Micro)n Technology, Inc.
Wells St. John P.S.
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