Dual-side epitaxy processes for production of nitride...

Details Dual-side epitaxy processes for production of nitride... Dual-side epitaxy processes for production of nitride...

2006-04-14

2008-12-30

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Warping of semiconductor substrate

Reexamination Certificate

active

07470599

ABSTRACT:
Methods are provided of fabricating a nitride semiconductor structure. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over one side of the substrate with a thermal chemical-vapor-deposition process. A second layer is similarly deposited over an opposite side of the substrate using the group-III precursor and the nitrogen precursor. The substrate is cooled after depositing the first and second layers without substantially deforming a shape of the substrate.

REFERENCES:
patent: 7198671 (2007-04-01), Ueda
patent: 2006/0204776 (2006-09-01), Chen et al.

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