Magnetic memory

Details Magnetic memory Magnetic memory

2007-02-22

2008-12-30

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C257S421000

Reexamination Certificate

active

07471550

ABSTRACT:
A magnetoresistance effect element is also located between second wiring and common wiring. The magnetoresistance effect element is electrically connected to the second wiring without a spin filter. When a reading current is supplied between the second wiring for supplying a reading current and the common wiring, since this is not supplied via a spin filter, no spin polarized current is supplied into the magnetoresistance effect element, so that it becomes difficult to magnetization-reverse a magnetosensitive layer. Even in a structure where, in order to improve recording density, the magnetosensitive layer is reduced in area so as to lower a writing current, no magnetization reversal occurs due to a supply of the reading current, and information can be read out without making the reading current considerably small in comparison with the writing current.

REFERENCES:
patent: 6072718 (2000-06-01), Abraham et al.
patent: 2007/0164380 (2007-07-01), Min et al.
patent: A 11-120758 (1999-04-01), None
“Spin-torque transfer in batch-fabricated spin-valve magnetic nanojunctions,” Journal of Applied Physics, May 15, 2003, vol. 93 No. 10, pp. 6859-6863.
“Spin Pumping in Ferromagnetic-Metal/Normal-Metal Junctions,” Journal of the Magnetic Society of Japan, 2003, vol. 27, No. 9 pp. 934-939.

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