Field-effect transistor

Details Field-effect transistor Field-effect transistor

2006-04-25

2008-12-23

Tran, Minh-Loan T (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S192000, C257S194000, C257SE29188, C257SE29246, C257S014000

Reexamination Certificate

active

07468524

ABSTRACT:
A nitride-based group III-V compound semiconductor device includes a buffer layer, a first nitride semiconductor layer and a second nitride semiconductor layer successively stacked on a substrate, the first and the second nitride layers having their respective lattice constants a1and a2in the relation a1>a2, an ohmic source electrode and an ohmic drain electrode formed on the second nitride layer, and a piezoelectric effect film formed on at least a partial region between the electrodes, wherein the piezoelectric film exerts compressive stress of an absolute magnitude at least equivalent to that of tensile stress applied to the second nitride layer due to the difference (a1−a2) between the lattice constants of the first and second nitride layers.

REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 2005/0145883 (2005-07-01), Beach et al.
patent: 2007/0272969 (2007-11-01), Teraguchi
patent: 2002-064201 (2002-02-01), None
Ohmi, device characterization of high electron mobility transistors with ferroelectric gate structures, IEEE. 163-166, 1996.
Hansen, AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors using barium strontium titanite, J. Vac. Sci. Tech. B 22, 2479-2485, 2004.
Han, J. et al. (2000). “MOVPE Growth of Quaternary (A1,Ga,In)N for UV Optoelectronics” Proceedings from Materials Research Sciences SymposiumIn GaN and Related Alloys—1999, Myers, T.H. et al. eds., vol. 595, pp. W6.2.1-W6.2.12.

Affiliated with

Also associated with

Rating

Field-effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4040670