Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2008-12-23
Garber, Charles D. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S522000, C257SE23013, C257SE29295, C257SE29298
Reexamination Certificate
active
07468538
ABSTRACT:
An intermediate semiconductor structure is disclosed. The semiconductor structure includes a substrate; a relaxed Si1-xGexlayer on the substrate, the relaxed Si1-xGexlayer having at least one trench; an un-etched Si layer portion on the substrate and beneath the relaxed Si1-xGexlayer along a periphery of the substrate providing structural support for the relaxed Si1-xGexlayer along the periphery of the substrate; and at least one void between the relaxed Si1-xGexlayer and the substrate, wherein the void encompasses an entire surface area of the substrate but for a portion of the substrate in contact with the un-etched Si layer portion.
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Kern Rim, et al.,
Cheng Kangguo
Chidambarrao Dureseti
Abate Joseph P.
Garber Charles D.
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Isaac Stanetta D
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