Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-07-20

2008-12-09

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S438000, C438S706000, C438S710000, C438S680000, C438S687000, C438S768000, C438S777000, C438S778000, C257S762000, C118S72300R

Reexamination Certificate

active

07462565

ABSTRACT:
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper exposed at a bottom of the opening without turning plasma discharge off after forming the opening in the same chamber as the formation of the opening.

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