Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

2006-11-20

2008-12-09

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

07462911

ABSTRACT:
A trench IGBT is disclosed which meets the specifications for turn-on losses and radiation noise. It includes a p-type base layer divided into different p-type base regions by trenches. N-type source regions are formed in only some of the p-type base regions. There is a gate runner in the active region of the trench IGBT. Contact holes formed in the vicinities of the terminal ends of the trenches and on both sides of the gate runner electrically connect some of the p-type base regions that do not include source regions to an emitter electrode. The number N1of p-type base regions that are connected electrically to the emitter electrode and the number N2of p-type base regions that are insulated from the emitter electrode are related with each other by the expression 25≦{N1/(N1+N2)}×100≦75.

REFERENCES:
patent: 2001/0054738 (2001-12-01), Momota et al.
patent: 09-331063 (1997-12-01), None
patent: 2000-228519 (2000-08-01), None
patent: 2001-308327 (2001-11-01), None
patent: 2002-16252 (2002-01-01), None
patent: 2002-100770 (2002-04-01), None
S. Momota et al.; “Analysis on the Low Current Turn-on Behavior of IGBT Module”; ISPSD 2000; May 22-25, Toulouse, France; 2000 IEEE; pp. 359-362.
Office action issued in corresponding Chinese application no. 2004100887007, dated Jul. 25, 2008; partial translation provided.

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