Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-10-07
2008-12-16
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07467363
ABSTRACT:
A method for verifying that a physical location of a memory matches a design logical representation, without having to use a focused ion beam to physically damage a memory location. The method provides that either a temporary or permanent circuit “defect” is intentionally created in the physical layout. Then, the new electrical schematic is extracted from the modified physical layout. Subsequently, if the design “defect” which was created is temporary, the new electrical schematic is simulated, the logical address of the “defect” is determined, and the extracted logical address is compared to the expected address to verify the logical to physical correlation. Alternatively, if the design “defect” which was created is permanent, after the new electrical schematic is extracted from the modified physical layout, the product is fabricated and the known design “defect” location is used to correlate to the electrically-tested defect logical location.
REFERENCES:
patent: 5884065 (1999-03-01), Takasaki
patent: 6510533 (2003-01-01), Siek et al.
patent: 2004/0205681 (2004-10-01), Nozuyama
patent: 2006/0005094 (2006-01-01), Nozuyama
Kalpathy-Cramer Jayashree
Price David T.
Ward Mark
Dinh Paul
LSI Corporation
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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