Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

2006-12-22

2008-12-16

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S217000, C257S250000, C257S279000, C257SE31109

Reexamination Certificate

active

07465979

ABSTRACT:
In order to diversify a current control method of a semiconductor device, improve performance (including a current drive performance) of the semiconductor device, and reduce a size of the semiconductor device, a second gate may be formed inside a substrate that forms a channel upon applying a bias voltage thereto. In one aspect, the semiconductor device includes: a well region of a first conductivity; source and drain regions of a second conductivity in the well region; a first gate on an oxide layer above the well region, controlling a first channel region of a second conductivity between the source region and the drain region; and a second gate under the first channel region.

REFERENCES:
patent: 6632710 (2003-10-01), Takahashi
patent: 2005/0087802 (2005-04-01), Park

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