Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2006-03-13
2008-12-02
Kelly, Cynthia H. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S280100, C430S326000, C526S242000
Reexamination Certificate
active
07459262
ABSTRACT:
The present invention provides fluorinated, thermosettable compositions that are photoimageable and which function as low dielectric materials. Such low dielectric materials are useful as passivation resist layers in liquid crystal displays, electroluminescent displays, light emitting diodes and semiconductor manufacture.
REFERENCES:
patent: 2928865 (1960-03-01), Brasen et al.
patent: 5229473 (1993-07-01), Kobo et al.
patent: 5401812 (1995-03-01), Yamamoto et al.
patent: 5958648 (1999-09-01), Nishimura
patent: 6653419 (2003-11-01), Petrov et al.
patent: 6723488 (2004-04-01), Goodall
patent: 2002/0119398 (2002-08-01), Desimone et al.
patent: 2002/0196211 (2002-12-01), Yumoto
patent: 2003/0003225 (2003-01-01), Choi et al.
patent: 2003/0099858 (2003-05-01), Duggal et al.
patent: 2003/0120008 (2003-06-01), Obayashi et al.
patent: 2003/0143319 (2003-07-01), Park et al.
patent: 2004/0021415 (2004-02-01), Vong et al.
patent: 2004/0023157 (2004-02-01), Feiring et al.
patent: 2004/0214103 (2004-10-01), Araki et al.
patent: 2005/0265685 (2005-12-01), Ohashi et al.
patent: WO 00/66575 (2000-11-01), None
patent: WO 2004/014964 (2004-02-01), None
patent: WO 2004/016689 (2004-02-01), None
S. Kho et. al., Passivation of Organic Light-Emitting Diodes by the Olasma Polymers Para-Xylene Thin Film, Jap. J. Appl. Phys. Part 2: Letters, 2002, vol. 41:1336-1338.
W.S Hong et. al., Fabrication of Novel TFT LCD Panels With High Aperture Ratio Using A-SiCO:H Films as a Passivation Layer, Mat. Res. Soc. Symp. Proc., 2003, vol. 762:265-270.
Thompson et. al., Introduction to Microlithography, 2ndEdition, 1994, American Chemical Society, Washington, DC. (Book Not Included).
R.P. Meagley et. al., Unique Polymers via Radical Diene Cyclization: Polyspironorbornanes and Their Application to 193 NM Microlithography, Chem. Comm., 1999, pp. 1587-1588.
F.M. Houlihan et. al., Synthesis of Cycloolefin—Maleic Anhydride Alternating Copolymers for 193 NM Imaging, Macromolecules, 1997, vol. 30:6517-6524.
T. Wallow et. al., Evaluation of Cycloolefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photoresists for 193 NM Photolithography, SPIE, 1997, vol. 2724:355-364.
F.M. Houlihan et. al., A Commercially Viable 193 NM Single Layer Resist Platform, J. Photopolymer Sci & Technol., 1997, vol. 10: 511-520.
O. Okoroanyanwu et. al., New Single Layer Positive Photoresists for 193 NM Photolithography, SPIE, 1997, vol. 3049:92-103.
R. Allen et. al., Protecting Groups for 193 NM Photoresits, SPIE, vol. 2724:334-343.
J. Nui et. al., Polymers for 193NM Microlithography: Regioregular 2-Alkoxycarbonylnortricyclene Polymers by Controlled Cyclopolymerization of Bulky Ester Derivatives of Norbornadiene. Agnew Chem. Int. Ed., 1998, vol. 37:667-670.
Brodsky et. al., 157 NM Resist Materials: Progress Report, J. VA. Sci. Technol. B, 2000, vol. 18:3396-3401.
E. I. duPont de Nemours and Company
Eoff Anca
Kelly Cynthia H.
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