Slurry for CMP, polishing method and method of manufacturing...

Details Slurry for CMP, polishing method and method of manufacturing... Slurry for CMP, polishing method and method of manufacturing...

2005-06-30

2008-12-02

Webb, Gregory E (Department: 1796)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C510S175000, C134S001300

Reexamination Certificate

active

07459398

ABSTRACT:
Disclosed is a CMP slurry comprising an abrasive grain, and a mixed surfactant comprising a first polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature, and a second polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room temperature.

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Notification of Reasons for Rejection issued by the Japanese Patent Office on Jun. 12, 2007, for Japanese Patent Application No. 2004-231167, and English-language translation thereof.

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