Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-11-30
2008-11-25
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S640000, C257SE21577, C257SE21578
Reexamination Certificate
active
07456097
ABSTRACT:
A system and method is disclosed for providing an etch procedure to facet the top corners of a via in a semiconductor device. A vertical anisotropic dry etch process is applied through an aperture in a resist mask to etch through a dielectric layer down to a bottom conductor layer. The resist mask is removed and an etch process is applied to etch away corner portions of the dielectric layer. The etch process forms a flat sidewall surface in the portions of the dielectric layer that form the via. The flat sidewall surface is disposed at an obtuse angle with respect to the top surface of the dielectric layer and at an obtuse angle with respect to a vertical sidewall of the via cavity. The flat sidewall surface and the absence of sharp corners facilitate a subsequent metal fill process.
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Foote, Jr. Richard W.
Hill Rodney
Torres Victor M.
Geyer Scott B.
Isaac Stanetta D
National Semiconductor Corporation
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