Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-09-14
2008-11-04
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S099000, C438S598000, C438S624000, C257SE21023, C257SE21034
Reexamination Certificate
active
07446030
ABSTRACT:
A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.
REFERENCES:
patent: 3347724 (1967-10-01), Schneble, Jr. et al.
patent: 3685026 (1972-08-01), Wakabayashi et al.
patent: 3723635 (1973-03-01), Smith
patent: 3808576 (1974-04-01), Castonguay et al.
patent: 3926916 (1975-12-01), Mastrangelo
patent: 3977957 (1976-08-01), Kosowsky et al.
patent: 4113899 (1978-09-01), Henry et al.
patent: 4133735 (1979-01-01), Afromowitz et al.
patent: 4252692 (1981-02-01), Taylor et al.
patent: 4331948 (1982-05-01), Malinaric et al.
patent: 4359414 (1982-11-01), Mastrangelo
patent: 4405432 (1983-09-01), Kosowsky
patent: 4439809 (1984-03-01), Weight et al.
patent: 4591411 (1986-05-01), Reimann
patent: 4642160 (1987-02-01), Burgess
patent: 4726877 (1988-02-01), Fryd et al.
patent: 4726991 (1988-02-01), Hyatt et al.
patent: 4799128 (1989-01-01), Chen
patent: 4888574 (1989-12-01), Rice et al.
patent: 4892776 (1990-01-01), Rice
patent: 4918033 (1990-04-01), Bartha et al.
patent: 4928199 (1990-05-01), Diaz et al.
patent: 4935584 (1990-06-01), Boggs
patent: 4977357 (1990-12-01), Shrier
patent: 4992333 (1991-02-01), Hyatt
patent: 4996945 (1991-03-01), Dix, Jr.
patent: 5068634 (1991-11-01), Shrier
patent: 5092032 (1992-03-01), Murakami
patent: 5095626 (1992-03-01), Kitamura et al.
patent: 5099380 (1992-03-01), Childers et al.
patent: 5142263 (1992-08-01), Childers et al.
patent: 5148355 (1992-09-01), Lowe et al.
patent: 5183698 (1993-02-01), Stephenson et al.
patent: 5189387 (1993-02-01), Childers et al.
patent: 5246388 (1993-09-01), Collins et al.
patent: 5248517 (1993-09-01), Shrier et al.
patent: 5252195 (1993-10-01), Kobayashi et al.
patent: 5260848 (1993-11-01), Childers
patent: 5262754 (1993-11-01), Collins
patent: 5278535 (1994-01-01), Xu et al.
patent: 5282312 (1994-02-01), DiStefano et al.
patent: 5294374 (1994-03-01), Martinez et al.
patent: 5295297 (1994-03-01), Kitamura et al.
patent: 5300208 (1994-04-01), Angelopoulos et al.
patent: 5317801 (1994-06-01), Tanaka et al.
patent: 5340641 (1994-08-01), Xu
patent: 5347258 (1994-09-01), Howard et al.
patent: 5354712 (1994-10-01), Ho et al.
patent: 5367764 (1994-11-01), DiStefano et al.
patent: 5378858 (1995-01-01), Bruckner et al.
patent: 5380679 (1995-01-01), Kano
patent: 5393597 (1995-02-01), Childers et al.
patent: 5403208 (1995-04-01), Felcman et al.
patent: 5404637 (1995-04-01), Kawakami
patent: 5413694 (1995-05-01), Dixon et al.
patent: 5416662 (1995-05-01), Kurasawa et al.
patent: 5440075 (1995-08-01), Kawakita et al.
patent: 5444593 (1995-08-01), Allina
patent: 5481795 (1996-01-01), Hatakeyama et al.
patent: 5483407 (1996-01-01), Anastasio et al.
patent: 5487218 (1996-01-01), Bhatt et al.
patent: 5493146 (1996-02-01), Pramanik et al.
patent: 5501350 (1996-03-01), Yoshida et al.
patent: 5502889 (1996-04-01), Casson et al.
patent: 5510629 (1996-04-01), Karpovich et al.
patent: 5550400 (1996-08-01), Takagi et al.
patent: 5557136 (1996-09-01), Gordon et al.
patent: 5654564 (1997-08-01), Mohsen
patent: 5669381 (1997-09-01), Hyatt
patent: 5685070 (1997-11-01), Alpaugh et al.
patent: 5708298 (1998-01-01), Masayuki et al.
patent: 5734188 (1998-03-01), Murata et al.
patent: 5744759 (1998-04-01), Ameen et al.
patent: 5781395 (1998-07-01), Hyatt
patent: 5802714 (1998-09-01), Kobayashi et al.
patent: 5807509 (1998-09-01), Shrier et al.
patent: 5808351 (1998-09-01), Nathan et al.
patent: 5834160 (1998-11-01), Ferry et al.
patent: 5834893 (1998-11-01), Bulovic et al.
patent: 5848467 (1998-12-01), Khandros et al.
patent: 5856910 (1999-01-01), Yurchenco et al.
patent: 5865934 (1999-02-01), Yamamoto et al.
patent: 5874902 (1999-02-01), Heinrich et al.
patent: 5906042 (1999-05-01), Lan et al.
patent: 5910685 (1999-06-01), Watanabe et al.
patent: 5926951 (1999-07-01), Khandros et al.
patent: 5940683 (1999-08-01), Holm et al.
patent: 5946555 (1999-08-01), Crumly et al.
patent: 5955762 (1999-09-01), Hively
patent: 5956612 (1999-09-01), Elliott et al.
patent: 5962815 (1999-10-01), Lan et al.
patent: 5972192 (1999-10-01), Dubin et al.
patent: 5977489 (1999-11-01), Crotzer et al.
patent: 6013358 (2000-01-01), Winnett et al.
patent: 6023028 (2000-02-01), Neuhalfen
patent: 6064094 (2000-05-01), Intrater et al.
patent: 6108184 (2000-08-01), Minervini et al.
patent: 6130459 (2000-10-01), Intrater
patent: 6160695 (2000-12-01), Winnett et al.
patent: 6172590 (2001-01-01), Shrier et al.
patent: 6191928 (2001-02-01), Rector et al.
patent: 6198392 (2001-03-01), Hahn et al.
patent: 6211554 (2001-04-01), Whitney
patent: 6239687 (2001-05-01), Shrier et al.
patent: 6251513 (2001-06-01), Rector et al.
patent: 6310752 (2001-10-01), Shrier et al.
patent: 6316734 (2001-11-01), Yang
patent: 6351011 (2002-02-01), Whitney et al.
patent: 6373719 (2002-04-01), Behling et al.
patent: 6433394 (2002-08-01), Intrater
patent: 6542065 (2003-04-01), Shrier et al.
patent: 6549114 (2003-04-01), Whitney et al.
patent: 6570765 (2003-05-01), Behling et al.
patent: 6593597 (2003-07-01), Sheu
patent: 6628498 (2003-09-01), Whitney et al.
patent: 6642297 (2003-11-01), Hyatt et al.
patent: 6657532 (2003-12-01), Shrier et al.
patent: 6693508 (2004-02-01), Whitney et al.
patent: 6741217 (2004-05-01), Toncich et al.
patent: 6981319 (2004-08-01), Shrier
patent: 6797145 (2004-09-01), Kosowsky
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6911676 (2005-06-01), Yoo
patent: 7034652 (2006-04-01), Whitney et al.
patent: 7049926 (2006-05-01), Shrier et al.
patent: 7064353 (2006-06-01), Bhat
patent: 7132922 (2006-11-01), Harris et al.
patent: 7173288 (2007-02-01), Lee et al.
patent: 7202770 (2007-04-01), Harris et al.
patent: 7218492 (2007-05-01), Shrier
patent: 7320762 (2008-01-01), Greuter et al.
patent: 2004/0095658 (2004-05-01), Buretea et al.
patent: 2004/0211942 (2004-10-01), Clark et al.
patent: 2006/0152334 (2006-07-01), Maercklein et al.
patent: 2006/0181826 (2006-08-01), Dudnikov, Jr. et al.
patent: 2006/0181827 (2006-08-01), Dudnikov, Jr. et al.
patent: 2006/0199390 (2006-09-01), Dudnikov, Jr. et al.
patent: 663491 (1987-12-01), None
patent: 3040784 (1982-05-01), None
patent: 56091464 (1981-07-01), None
patent: PCT/US95/08808 (1996-02-01), None
patent: WO96/02924 (1996-02-01), None
patent: PCT/US97/00781 (1997-07-01), None
patent: WO9726665 (1997-07-01), None
patent: PCT/US97/21117 (1998-05-01), None
U.S. Appl. No. 10/875,372, filed Apr. 21, 2005, Shrier, Karen P.
U.S. Appl. No. 10/366,174, filed Aug. 19, 2004, Shrier, Karen P.
Facchetti, Antonio, “Semiconductors for Organic Transistors”, Materials Today, vol. 10, No. 3, pp. 28-37.
Reese, Colin and Bao, Zhenan, “Organic Single-Crystal Field-Effect Transistors”, Materials Today, vol. 10, No. 3, pp. 20-27.
Modine, F.A. and Hyatt, H.M. “New Varistor Material”, Journal of Applied Physics, 64 (8), Oct. 15, 1988, pp. 4229-4232.
Celzard, A., et al.,Journal of Physics: Condensed Matter, 9 (1997) pp. 2225-2237.
U.S. Appl. No. 11/602,881, Lex Kosowsky, Semiconductor Devices Including Voltage Switchable Materials for Over-Voltage Protection, filed Nov. 21, 2006.
U.S. Appl. No. 11/903,820, Lex Kosowsky, Formulations for Voltage Switchable Dielectric Material Having a Stepped Voltage Response and Methods for Making the Same, filed Sep. 24, 2007.
U.S. Appl. No. 11/562,222, Lex Kosowsky, Wireless Communication Device Using Voltage Switchable Dielectric Material, filed Nov. 21, 2006.
U.S. Appl. No. 11/562,289, Lex Kosowsky, Light-Emitting Device Using Voltage Switchable Dielectric Mat
Carr & Ferrell LLP
Jefferson Quovaunda
Shocking Technologies, Inc.
Smith Matthew S.
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