Method for using a multi-use memory cell and memory array

Details Method for using a multi-use memory cell and memory array Method for using a multi-use memory cell and memory array

2006-07-31

2008-11-04

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S046000, C365S100000

Reexamination Certificate

active

07447056

ABSTRACT:
A method for using a multi-use memory cell and memory array are disclosed. In one preferred embodiment, a memory cell is operable as a one-time programmable memory cell or a rewritable memory cell. The memory cell comprises a memory element comprising a semiconductor material configurable to one of at least three resistivity states, wherein a first resistivity state is used to represent a data state of the memory cell when the memory cell operates as a one-time programmable memory cell but not when the memory cell operates as a rewritable memory cell. A memory array with such memory cells is also disclosed. In another preferred embodiment, a memory cell is provided comprising a switchable resistance material, wherein the memory cell is operable in a first mode in which the memory cell is programmed with a forward bias and a second mode in which the memory cell is programmed with a reverse bias.

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