Semiconductor memory device including multi-layer gate...

Details Semiconductor memory device including multi-layer gate... Semiconductor memory device including multi-layer gate...

2006-08-30

2008-11-04

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE27086

Reexamination Certificate

active

07446364

ABSTRACT:
A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a side of an upper surface of a substrate and has a first multi-layer gate. The first-stepped portion is formed by etching the substrate adjacent to the first multi-layer gate of the first select transistor such that the first stepped portion forms a cavity in the upper surface of the substrate. The first contact plug is formed in the first stepped portion.

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