Patterned structures fabricated by printing mask over...

Details Patterned structures fabricated by printing mask over... Patterned structures fabricated by printing mask over...

2005-07-18

2008-12-02

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S149000

Reexamination Certificate

active

07459400

ABSTRACT:
A patterned integrated circuit structure defining a gap or via is fabricated solely by digital printing and bulk processing. A sacrificial lift-off pattern is printed or otherwise formed over a substrate, and then covered by a blanket layer. A mask is then formed, e.g., by printing a wax pattern that covers a region of the blanket layer corresponding to the desired patterned structure, and overlaps the lift-off pattern. Exposed portions of the blanket layer are then removed, e.g., by wet etching. The printed mask and the lift-off pattern are then removed using a lift-off process that also removes any remaining portions of the blanket layer formed over the lift-off pattern. A thin-film transistor includes patterned source/drain structures that are self-aligned to an underlying gate structure by forming a photoresist lift-off pattern that is exposed and developed by a back-exposure process using the gate structure as a mask.

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