Semiconductor protection device

Details Semiconductor protection device Semiconductor protection device

2005-06-14

2008-11-11

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000

Reexamination Certificate

active

07449750

ABSTRACT:
A semiconductor protection device for efficiently protecting internal circuits in semiconductor integrated circuits wherein an N-type diffusion layer is formed to enclose a P+doped diffusion layer. The breakdown voltage of the parasitic diode connected to the collector electrode is consequently set lower than the breakdown voltage of the diode connected to the emitter voltage due to the increase in the concentration of N-type impurities around the parasitic diode from the forming of the N-type diffusion layer. In other words, the diode breakdown voltage is determined by the high or low concentration of impurities around the applicable diode so that the higher concentration of impurities, the lower the breakdown voltage. The clamping of the parasitic diode connected between the high voltage potential supply and the low voltage potential supply is therefore boosted to make electrical current flow more easily in the reverse direction so that damage to internal circuits from static electricity applied to the power supply terminals can be prevented.

REFERENCES:
patent: 5530271 (1996-06-01), Fallica
patent: 6-120412 (1994-04-01), None

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