Insulated gate semiconductor device with small feedback...

Details Insulated gate semiconductor device with small feedback... Insulated gate semiconductor device with small feedback...

2005-09-01

2008-12-02

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29006

Reexamination Certificate

active

07459751

ABSTRACT:
Disclosed is an insulated gate semiconductor device including a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region; a semiconductor region which includes a channel forming region and is disposed to oppose the gate electrode region with the first insulating film region between them; and a second region which has a conductor region buried in a semiconductor region not including the channel forming region disposed to oppose the gate electrode region with the first insulating film region between them, and has a second insulating film region which separates the conductor region from the semiconductor region.

REFERENCES:
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 6384456 (2002-05-01), Tihanyi
patent: 2003/0047793 (2003-03-01), Disney
patent: 2003/0073287 (2003-04-01), Kocon
patent: 2004/0041201 (2004-03-01), Sugiyama et al.
patent: 2005/0012175 (2005-01-01), Tsuruta
patent: 2005/0263852 (2005-12-01), Ogura et al.
patent: 8-274301 (1996-10-01), None

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