Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-10-19
2008-11-18
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S229000, C365S189040, C365S230060
Reexamination Certificate
active
07453743
ABSTRACT:
An Static Random Access Memory (SRAM) device and a method of operating the same. In one embodiment, the SRAM device includes: (1) an SRAM array coupled to row peripheral circuitry by a word line and coupled to column peripheral circuitry by bit lines and (2) an array low voltage control circuitry that provides an enhanced low operating voltage VESSto the SRAM array during at least a portion of an active mode thereof.
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Brady W. James
Cimino Frank D.
Le Thong Q
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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