Methods for fabricating semiconductor devices and contacts...

Details Methods for fabricating semiconductor devices and contacts... Methods for fabricating semiconductor devices and contacts...

2006-02-15

2008-12-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S555000, C438S672000, C438S942000, C257S311000, C257S797000, C257SE21018, C257SE21507

Reexamination Certificate

active

07470614

ABSTRACT:
Methods for fabricating contacts to semiconductor structures are provided. A method comprises forming two members extending from a semiconductor substrate and separated by a portion of the substrate. First and second semiconductor devices are formed in and on the substrate and each comprise a common impurity doped region that is disposed within the portion of the substrate. A dielectric layer is deposited overlying the members, the semiconductor devices, and the common impurity doped region to a thickness such that a depression overlying the impurity doped region is formed. A fill material is deposited to substantially fill the depression and a portion of the dielectric layer is etched. A masking layer is deposited and a portion of the masking layer is removed to expose the fill material. A via is formed by etching the fill material and dielectric layer and a conductive material is deposited therein.

REFERENCES:
patent: 5710073 (1998-01-01), Jeng et al.
patent: 2002/0098652 (2002-07-01), Mori et al.
patent: 2004/0140510 (2004-07-01), Hazama
patent: 2005/0023600 (2005-02-01), Shin et al.
patent: 2006/0017111 (2006-01-01), Kamiya et al.
patent: 2006/0223332 (2006-10-01), Jang et al.

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