Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-27
2008-12-09
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S206000, C257SE29026, C257SE27026, C257SE29120
Reexamination Certificate
active
07462917
ABSTRACT:
According to the present invention, there is provided a semiconductor device having:first and second fins formed on a semiconductor substrate to oppose each other, and made of a semiconductor layer;an active region which is formed on the semiconductor substrate so as to be connected to the first and second fins, and supplies a predetermined voltage to the first and second fins; anda gate electrode formed on an insulating film formed on the semiconductor substrate, in a position separated from the active region by a predetermined spacing, so as to cross the first and second fins,wherein in the active region, a predetermined portion between a first portion connected to the first fin and a second portion connected to the second fin is removed.
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Choi et al., “A Spacer Patterning Technology for Nanoscale CMOS,” IEEE Transactions on Electron Devices ( Mar. 2002), 49:436-441.
Estrada Michelle
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Jefferson Quovaunda
Kabushiki Kaisha Toshiba
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