Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-11
2008-12-23
Deo, Duy-Vu (Department: 1792)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S706000, C438S688000, C438S656000
Reexamination Certificate
active
07468319
ABSTRACT:
The present invention relates to a method for preventing a metal corrosion in a semiconductor device. The present method includes the steps of etching of a metal layer in a chamber, the metal layer having a photoresist pattern thereon or thereover; oxidizing a surface of the metal layer using a plasma comprising N2O in the same chamber; and removing the photoresist. Therefore, metal corrosion as well as bridges between metal wirings can be suppressed or prevented, thereby improving the profile of metal layer and the reliability and yield of the semiconductor device.
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S. Wolf and R.N. Tauber, (Silicon Processing for the VLSI Era, vol. 1- Process Technology, Lattice Press, 1986) (pp. 182-188).
Dahimene Mahmoud
Deo Duy-Vu
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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