Method enabling a standard CMOS fab to produce an IC to...

Details Method enabling a standard CMOS fab to produce an IC to... Method enabling a standard CMOS fab to produce an IC to...

2004-12-30

2008-12-09

Dinh, Paul (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

07464351

ABSTRACT:
CMOS implementable three-dimensional silicon sensors are fabricated using a standard fab but using augmented rules that create mask patterns not expressible with existing fab rules. Standard fab rules are not optimized to produce high quality three-dimensional silicon sensors. Accordingly, the normal set of rules does not permit creating the fab mask patterns necessary for high performance such sensors. However, the present invention can use the fab standard mask set with a rich set of fab instructions to express mask patterns from the mask set that would not otherwise be expressible. The resultant method enables high quality silicon sensors for three-dimensional sensing to be readily mass produced from a standard fab.

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