Method for fabricating a circuit component

Details Method for fabricating a circuit component Method for fabricating a circuit component

2008-02-02

2008-12-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S622000, C438S508000, C438S508000, C257S734000, C257S758000, C257S778000

Reexamination Certificate

active

07462558

ABSTRACT:
A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.

REFERENCES:
patent: 6362087 (2002-03-01), Wang et al.
patent: 6642136 (2003-11-01), Lee et al.
patent: 6841872 (2005-01-01), Ha et al.
patent: 6959856 (2005-11-01), Oh et al.
patent: 7078331 (2006-07-01), Kwon et al.
patent: 2003/0127734 (2003-07-01), Lee et al.
patent: 2003/0219966 (2003-11-01), Jin et al.
patent: 2004/0253801 (2004-12-01), Lin

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