Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2006-01-10

2008-12-23

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S080000, C257S100000, C257S101000, C257S103000, C257S918000, C257SE51018, C257SE51022, C257SE33001, C257SE33054, C257SE25032

Reexamination Certificate

active

07468528

ABSTRACT:
A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

REFERENCES:
patent: 6936864 (2005-08-01), Kondo
patent: 2005/0189551 (2005-09-01), Peng et al.
patent: 2005/0264172 (2005-12-01), Wojnarowski et al.
patent: 7153993 (1995-06-01), None
patent: 2004111493 (2004-04-01), None

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