Semiconductor device having a tapered gate electrode

Details Semiconductor device having a tapered gate electrode Semiconductor device having a tapered gate electrode

1996-03-13

1999-05-25

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257192, H01L 2976, H01L 310328

Patent

active

059071770

ABSTRACT:
A WSi film is deposited on a semi-insulative GaAs substrate. Thereafter, a first Al mask and a second SiO.sub.2 mask are formed such that these two masks overlap on the WSi film. A SF.sub.6 /CF.sub.4 mixture, which contains a gas of SF.sub.6 in an amount of more than 20%, is used to dry-etch the WSi film. The WSi film is T-shaped, in other words the WSi film becomes gradually downwardly narrower in lateral length. The second mask is stripped. A .GAMMA.-shaped gate electrode is formed by means of an anisotropic etching process. Subsequently, an isotropic etching process is carried out to reduce the gate length of the electrode down to 0.5 .mu.m or less. Silicon ions are implanted to form individual n' layers. A through film is deposited. Silicon ions are implanted to form individual n.sup.+ layers.

REFERENCES:
patent: 4914056 (1990-04-01), Okumura
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 5342481 (1994-08-01), Kadomura
patent: 5532507 (1996-07-01), Wada
patent: 5600168 (1997-02-01), Lee

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