High voltage field effect transistor and method of fabricating t

Details High voltage field effect transistor and method of fabricating t High voltage field effect transistor and method of fabricating t

1998-08-25

1999-05-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257344, 257408, 257409, 257488, H01L 2358

Patent

active

059071737

ABSTRACT:
The present invention discloses a high voltage field effect transistor and fabricating the same. A high voltage field effect transistor includes a semiconductor substrate, a first conductivity type well in the semiconductor substrate, first and second conductivity type drift regions in the first conductivity type well, heavily doped impurity regions having first and second conductivity types in the first conductivity type drift region, a heavily doped second conductivity type impurity region in the second conductivity type drift region, and a lightly doped second conductivity type buffer layer in the second conductivity type drift region to surround the heavily doped second conductivity type impurity region.

REFERENCES:
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4270137 (1981-05-01), Coe
patent: 4290077 (1981-09-01), Ronen
patent: 4823173 (1989-04-01), Beasom
patent: 5386136 (1995-01-01), Williams et al.
patent: 5831320 (1998-11-01), Kwon et al.

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